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학술지 Structure Effects on Resistive Switching of Al/TiOx/Al Devices for RRAM Applications
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저자
유리은, 김성호, 유민기, 최성율, 최양규
발행일
200804
출처
IEEE Electron Device Letters, v.29 no.4, pp.331-333
ISSN
0741-3106
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LED.2008.918253
협약과제
07IB1700, 고신뢰성 charge complex 소재 탐색, 최성율
초록
Resistive switching characteristics are investigated for Al/TiO??/Al devices, particularly for the structural effects in crossbar and via-hole-type devices. The via-hole structure shows more reliable switching characteristics than the crossbar structure, owing to the elimination of possible edge effects. The asymmetric switching behavior is analyzed with top Al/ TiO??/Al and bottom Al/TiO??/Al interfaces. A trap-controlled space-charge-limited-current model is proposed as a possible switching mechanism, and it is verified that switching mainly occurs on the top electrode/TiO?? interface side. © 2008 IEEE.
키워드
Crossbar structure, Metal-insulator-metal (MIM), Resistance random access memory (RRAM), Resistive switching, Space-charge-limited conduction, Via-hole structure