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학술지 Characteristics of Vanadium Dioxide Films Deposited by RF-magnetron Sputter Deposition Technique using V-metal Target
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저자
윤선진, 임정욱, 채병규, 김봉준, 김현탁
발행일
200804
출처
Physica B : Condensed Matter, v.403 no.5-9, pp.1381-1383
ISSN
0921-4526
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.physb.2007.10.362
초록
Vanadium dioxide films were deposited using reactive RF-magnetron sputter deposition technique and characterized without or with post-annealing process for the application of thermal sensors. The film thickness variation on a 4-in wafer was less than 짹2%. As-deposited film showing an abrupt metal-insulator transition (MIT) could be obtained with O2 fraction of 6%. The films deposited at 400 and 450 °C showed abrupt changes of resistance in the order of 103 near typical MIT temperature of VO2 without post-annealing. The 110-nm-thick VO2 film deposited at 450 °C on c-sapphire revealed the resistance change of 1.2×104 near 68 °C after annealing at 510 °C. © 2007 Elsevier B.V. All rights reserved.
키워드
Metal-insulator transition, Reactive sputter deposition, Vanadium dioxide
KSP 제안 키워드
Abrupt change, As-deposited film, Post-annealing process, RF-magnetron sputter deposition, Resistance change, Sputter deposition technique, Thickness variation, Vanadium dioxide films, film thickness, metal-insulator transition, reactive sputter deposition