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학술대회 Transparent ZnO Thin Film Transistor for the Application of High Aperture Ratio Bottom Emission AM-OLED Display
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저자
박상희, 유민기, 황치선, 양신혁, 변춘원, 이정익, 신재헌, 윤성민, 추혜용, 조경익, 이기문, 오민석, 임성일
발행일
200805
출처
Society for Information Display (SID) International Symposium 2008, pp.629-632
DOI
https://dx.doi.org/10.1889/1.3069741
협약과제
08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
초록
We have fabricated 2.5" QCIF+ bottom emission AM-OLED with aperture ratio of 59.6% using fully transparent ZnO-TFT array and highly conductive oxide/metal/oxide electrode for the first time. The bias stability of ZnO TFT was improved by optimizing ZnO deposition and first gate insulator process. Plasma free process for the gate insulator makes ZnO TFT very stable under electrical bias stress. The Vth shift was less than 0.3 V after V DS=25 V and VGS=15 V application for 60 hours. Transparent ZnO TFT characteristics did not change noticeably under irradiation of visible light. © 2008 SID.
KSP 제안 키워드
3 V, AM-OLED, Aperture ratio, Bias stress, Conductive oxide, Gate insulator, OLED display, Oxide electrode, TFT array, Thin-Film Transistor(TFT), Visible Light