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학술지 Effects of Oxygen Concentration on the Electrical Properties of ZnO Films
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저자
김홍승, 정은수, 이원재, 김진혁, 류상욱, 최성율
발행일
200805
출처
Ceramics International, v.34 no.4, pp.1097-1101
ISSN
0272-8842
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.ceramint.2007.09.105
협약과제
07SB1300, 유기 전자소자용 유기 소재 개발, 최성율
초록
In this paper, electrical characteristics by various oxygen content in ZnO films were studied. To control the oxygen content of ZnO films, post-thermal annealing was performed in N2 and air ambient, led to improve crystallinity and optical properties of ZnO films. The oxygen concentration was measured by Auger electron spectroscopy. The ZnO films having the deficiency of oxygen showed the electron concentrations between 1021 and mid 6 × 1017 cm-3 and resistivity at 10-3-10-1 廓 cm. On the other hand, when the oxygen concentration of the ZnO films was up to the stoichiometry with Zn, the ZnO films showed low electron concentration at -1017 cm-3 and resistivity at 10 廓 cm. © 2007 Elsevier Ltd and Techna Group S.r.l.
키워드
A. Films, C. Electrical property, D. ZnO, Oxygen content
KSP 제안 키워드
Auger Electron Spectroscopy, Electron concentration, Optical properties of ZnO, Oxygen concentration, Oxygen content, Post-thermal annealing, ZnO films, air ambient, electrical characteristics, electrical properties(I-V curve), optical properties