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학술지 Growth of Thin Si Oxide in a Cyclic Oxygen Plasma Environment Below 200 °C
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저자
문제현, 김용해, 정충희, 이수재, 박동진, 송윤호
발행일
200808
출처
Applied Surface Science, v.254 no.20, pp.6422-6427
ISSN
0169-4332
출판사
Elsevier Science, Elsevier
DOI
https://dx.doi.org/10.1016/j.apsusc.2008.04.029
협약과제
07MB1600, Flexible 디스플레이, 조경익
초록
The growth of Si oxide by means of a cyclic radio-frequency (rf) plasma oxidation process has been explored in a low temperature range of 100-200 °C. The growth mechanism exhibits Cabrera-Mott (CM) oxidation, that is, the transport of mobile ionic species is assisted by an electric field. The low activation energy of 0.3 eV is attributed to the small size of O - and the assistance of the electric field. The oxide becomes off-stoichiometric as one approaches to the exterior surface of the oxide layer. © 2008 Elsevier B.V. All rights reserved.
키워드
Growth kinetics, Ion transport, Oxidation, Oxygen plasma, Si
KSP 제안 키워드
Activation Energy, Cabrera-Mott, Growth kinetics, Ion transport, Ionic species, Low temperature(LT), Oxidation process, Oxide layer, Radio Frequency(RF), Si oxide, Temperature range