상세정보
학술지
Etching Characteristics of Al2O3 Thin Films in Inductively Coupled BCl3/Ar Plasma
- 발행일
- 200806
- 출처
- Vacuum, v.82 no.11, pp.1198-1202
- ISSN
- 0042-207X
- 출판사
- Elsevier
- 협약과제
- 05MB3300, Flexible 디스플레이 (차세대 디스플레이 기술 개발), 강광용
- 초록
- The investigation of Al2O3 etch characteristics in the BCl3/Ar inductively coupled plasma was carried out in terms of effects of input process parameters (gas pressure, input power, bias power) on etch rate and etch selectivity over poly-Si and photoresist. It was found that, with the changes in gas pressure and input power, the Al2O3 etch rate follows the behavior of ion current density while the process rate is noticeably contributed by the chemical etch pathway. The influence of input power on the etch threshold may be connected with the concurrence of chemical and physical etch pathways in ion-assisted chemical reaction. © 2008 Elsevier Ltd. All rights reserved.
- 키워드
- Al O 2 3, Etch rate, Etch threshold, Selectivity, Sputtering
- KSP 제안 키워드
- Al O 2 3, Ar plasma, Etch characteristics, Etch rates, Etch selectivity, Etch threshold, Etching characteristics, Gas Pressure, Inductively-coupled plasma(ICP), Input power, Ion current density