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학술지 Improvement in the optical and structural properties of InGaN/GaN multiple quantum wells by indium predeposition
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저자
박진섭, 문용태, 김동준, 박래만, T. Yao, 박성주
발행일
200808
출처
Journal of Physics D : Applied Physics, v.41 no.16, pp.1-4
ISSN
0022-3727
출판사
Institute of Physics (IOP)
DOI
https://dx.doi.org/10.1088/0022-3727/41/16/165103
초록
Indium predeposition prior to the growth of InGaN well layers was found to significantly improve the optical properties of InGaN/GaN multiple quantum wells (MQWs). Photoluminescence and ultraviolet-visible absorption spectroscopy measurements showed a remarkable decrease in the Stokes shift with increasing indium predeposition time. High resolution x-ray diffraction measurements revealed a significant improvement in the interface quality of the MQWs. These results indicate that indium predeposition improves the uniformity of the indium composition in InGaN well layers, resulting in the formation of nearly perfect square potential wells in MQWs. © 2008 IOP Publishing Ltd.
KSP 제안 키워드
High-resolution X-ray diffraction, InGaN/GaN multiple quantum well, Multiple-quantum-well(MQW), Optical and structural properties, Quantum Well(QW), Stokes shift, Ultraviolet-visible absorption spectroscopy, interface quality, optical properties, potential well