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학술지 Emitter Scaling Dependence of Mixed-Mode Reliability Degradation in Silicon-Germanium Heterojunction Bipolar Transistors
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저자
이승윤, Chendong Zhu, John D. Cressler, 이상흥
발행일
200807
출처
Japanese Journal of Applied Physics, v.47 no.7, pp.5309-5313
ISSN
0021-4922
출판사
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
DOI
https://dx.doi.org/10.1143/JJAP.47.5309
협약과제
08ZB1300, 실리콘-게르마늄 양자채널 나노 신소자 기술 연구, 이상흥
초록
The variation of mixed-mode reliability degradation with emitter scaling in silicon-germanium heterojunction bipolar transistors was investigated. While base current density (Jb) after reverse emitter-base stress increased with increasing perimeter-to-area (P/A) ratio, Jb exhibited a reverse behavior in the case of mixed-mode stress. In addition, the up and down variation of Jb was observed with increasing stress time in some devices of very small P/A ratios. It is considered that these phenomena resulted from self-heating effect depending on device size. © 2008 The Japan Society of Applied Physics.
키워드
Emitter, Heterojunction bipolar transistor, Mixed-mode stress, Perimeterto-area ratio, Reliability, Self-heating, Silicon-germanium
KSP 제안 키워드
Applied physics, Device size, Heterojunction Bipolar Transistors(HBTs), Mixed-mode stress, Perimeterto-area ratio, Self-heating effect(SHE), Silicon-germanium(SiGe), current density