ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Electrostatic Modification of Infrared Response in Gated Structures based on VO2
Cited 59 time in scopus Download 0 time Share share facebook twitter linkedin kakaostory
저자
M. M. Qazilbash, Z. Q. Li, V. Podzorov, M. Brehm, F. Keilmann, 채병규, 김현탁, D. N. Basov
발행일
200806
출처
Applied Physics Letters, v.92 no.24, pp.1-3
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.2939434
협약과제
08MB3100, 전기적 점프(Current Jump)를 이용한 신소자 기술, 김현탁
초록
We investigate the changes in the infrared response due to charge carriers introduced by electrostatic doping of the correlated insulator vanadium dioxide (VO2) integrated in the architecture of the field effect transistor. Accumulation of holes at the VO2 interface with the gate dielectric leads to an increase in infrared absorption. This phenomenon is observed only in the insulator-to-metal transition regime of VO2 with coexisting metallic and insulating regions. We postulate that doped holes lead to the growth of the metallic islands thereby promoting percolation, an effect that persists upon removal of the applied gate voltage. © 2008 American Institute of Physics.
KSP 제안 키워드
Charge carriers, Correlated insulator, Electrostatic doping, Field-effect transistors(FETs), Metallic islands, Transition regime, gate dielectric, gate voltage, infrared absorption, insulator-to-metal transition, vanadium dioxide