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학술지 RF Frequency Doubling Using a Silicon p-i-n Diode-Based Mach-Zehnder Modulator
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저자
박정우, 유종범, 이종무, 김경옥
발행일
200808
출처
IEEE Photonics Technology Letters, v.20 no.16, pp.1384-1386
ISSN
1041-1135
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LPT.2008.926831
협약과제
08MB1600, 실리콘 기반 초고속 광인터커넥션 IC, 김경옥
초록
We demonstrate frequency doubling at 1 GHz using a new silicon Mach-Zehnder modulator (MZM). Modulation of the refractive index of silicon for an MZM action is achieved via the injection/depletion of electrons and holes in a p-i-n diode. The silicon MZM used in the experiment shows high phase-shift efficiency and a V? L? of 1.88 × 10-2V쨌cm which is nearly 350 times smaller than those of previously reported LiNbO3-based MZM. Also, a theoretical analysis of frequency doubling in the time domain shows good agreement with the experimental results. © 2008 IEEE.
키워드
Modulator, Photonic integrated circuit, Silicon-on-insulator, Waveguide modulator
KSP 제안 키워드
Mach-Zehnder(MZ), PIN Diode, Phase shift, RF frequency, Silicon On Insulator(SOI), Theoretical Analysis, frequency doubling, photonic integrated circuits(PICs), refractive index, time-domain, waveguide modulator