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학술지 New Approach to the Growth of SiOx Nanowire Bunch using Au Catalyst and SiNx Film on Si Substrate
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저자
박래만, 박현규, 최철종, 김상우, 맹성렬
발행일
200809
출처
Physica E : Low-dimensional Systems and Nanostructures, v.40 no.10, pp.3170-3172
ISSN
1386-9477
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.physe.2008.05.008
협약과제
06MB4700, 차세대 고성능 광전자소자 및 스마트 생화학 센서 구현을 위한 IT-BT-NT 융합 핵심기술 개발, 맹성렬
초록
SiOx nanowire bunches were fabricated on a SiNx film with Au catalytic metal in the presence of an Ar flow of 50 sccm at 1150 °C. The resulting samples were characterized by field-emission scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. A SiNx film serves as a barrier to the diffusion of Si atoms from the Si substrate to the catalytic Au metal, where a substrate is a Si source material for SiOx nanowire (NW) growth. Using this process, we could temporally control the initial growth step of SiOx NWs and easily grow the NW bunch. © 2008 Elsevier B.V. All rights reserved.
키워드
Amorphous Si nanowire, Thermal chemical vapor deposition, Transmission electron microscopy
KSP 제안 키워드
Ar flow, Au catalyst, Catalytic metal, Chemical Vapor Deposition, Chemical vapour deposition(CVD), New approach, Scanning electron microscopy(S.E.M.), Si nanowires, Si source, Si substrate, Transmission Electron Microscopy(TEM)