상세정보
학술지
New Approach to the Growth of SiOx Nanowire Bunch using Au Catalyst and SiNx Film on Si Substrate
- 저자
- 박래만, 박현규, 최철종, 김상우, 맹성렬
- 발행일
- 200809
- 출처
- Physica E : Low-dimensional Systems and Nanostructures, v.40 no.10, pp.3170-3172
- ISSN
- 1386-9477
- 출판사
- Elsevier
- 협약과제
- 06MB4700, 차세대 고성능 광전자소자 및 스마트 생화학 센서 구현을 위한 IT-BT-NT 융합 핵심기술 개발, 맹성렬
- 초록
- SiOx nanowire bunches were fabricated on a SiNx film with Au catalytic metal in the presence of an Ar flow of 50 sccm at 1150 °C. The resulting samples were characterized by field-emission scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. A SiNx film serves as a barrier to the diffusion of Si atoms from the Si substrate to the catalytic Au metal, where a substrate is a Si source material for SiOx nanowire (NW) growth. Using this process, we could temporally control the initial growth step of SiOx NWs and easily grow the NW bunch. © 2008 Elsevier B.V. All rights reserved.
- 키워드
- Amorphous Si nanowire, Thermal chemical vapor deposition, Transmission electron microscopy
- KSP 제안 키워드
- Ar flow, Au catalyst, Catalytic metal, Chemical Vapor Deposition, Chemical vapour deposition(CVD), New approach, Scanning electron microscopy(S.E.M.), Si nanowires, Si source, Si substrate, Transmission Electron Microscopy(TEM)