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학술지 Growth of Silicon Nanowires in Aqueous Solution under Atmospheric Pressure
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저자
박래만, 최철종
발행일
201406
출처
Nano Research, v.7 no.6, pp.898-902
ISSN
1998-0124
출판사
Tsinghua Univ Press, Springer
DOI
https://dx.doi.org/10.1007/s12274-014-0451-x
협약과제
14PB1400, 윈도우 일체형 30인치급 터치센서 개발, 정우석
초록
A new method for growing silicon nanowires is presented. They were grown in an aqueous solution at a temperature of 85 °C under atmospheric pressure by using sodium methylsiliconate as a water-soluble silicon precursor. The structure, morphology, and composition of the as-grown nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray spectrometry. It was also confirmed by X-ray powder diffraction and Raman spectroscopy that the silicon nanowire has a hexagonal structure. It was possible to grow the crystalline silicon nanowires at low temperature under atmospheric pressure because potassium iodide, which was used as a gold etchant, sufficiently increased the surface energy and reactivity of gold as a metal catalyst for the reaction of the Si precursor even at low temperature. [Figure not available: see fulltext.] © 2014 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.
키워드
metal catalyst hexagonal crystalline phase, Silicon nanowire, solution process
KSP 제안 키워드
Aqueous solution, As-grown, Crystalline silicon, Energy-Dispersive X-ray Spectrometry(EDXS), Low temperature(LT), Metal catalyst, Raman spectroscopy, Scanning electron microscopy(S.E.M.), Silicon nanowires(SiNWs), Silicon precursor, Transmission Electron Microscopy(TEM)