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학술지 Electrical Characterization of n/p-Type Nickel Silicide/Silicon Junctions by Sb Segregation
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저자
전명심, 박영삼, 현영훈, 최성진, 정태형, 장문규
발행일
201108
출처
Journal of Nanoscience and Nanotechnology, v.11 no.8, pp.7339-7342
ISSN
1533-4880
출판사
American Scientific Publishers (ASP)
DOI
https://dx.doi.org/10.1166/jnn.2011.4851
협약과제
10ZE1100, ETRI 연구역량 강화를 위한 R&D체계 구축 및 Seed형 기술개발을 위한 창의형 연구 사업, 현창희
초록
In this paper, n/p-type nickel-silicided Schottky diodes were fabricated by incorporating antimony atoms near the nickel silicide/Si junction interface and the electrical characteristics were studied through measurements and simulations. The effective Schottky barrier height (SBH) for electron, extracted from the thermionic emission model, drastically decreased from 0.68 to less than 0.1 eV while that for hole slightly increased from 0.43 to 0.53 eV. In order to identify the current conduction mechanisms, the experimental current-temperature-voltage characteristics for the n-type diode were fitted based on various models for transport of charge carrier in Schottky diodes. As the result, the large change in effective SBH for electron is ascribed to trap-assisted tunneling rather than barrier height inhomogeneity © 2011 American Scientific Publishers.
키워드
Nickel silicide, Sb Segregation, Schottky barrier height
KSP 제안 키워드
Barrier height inhomogeneity, Charge carriers, Current conduction mechanisms, Electrical characterization, Junction interface, N-type, Nickel silicide, Sb segregation, Schottky barrier height, Schottky barriers(SBs), Silicon junctions