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학술지 Electrical Characterization of ZnO Single Nanowire Device for Chemical Sensor Application
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저자
김은경, 이홍열, 문승언, 박종혁, 박소정, 곽준혁, 맹성렬, 박강호, 김종대, 김상우, 지현진, 김규태
발행일
200809
출처
Journal of Nanoscience and Nanotechnology, v.8 no.9, pp.4698-4701
ISSN
1533-4880
출판사
American Scientific Publishers (ASP)
DOI
https://dx.doi.org/10.1166/jnn.2008.IC65
협약과제
07MB2600, 유비쿼터스 단말용 부품 모듈, 김종대
초록
Vertically well-aligned high quality ZnO nanowires were grown on GaN epilayer on c-plane sapphire via a vapor-liquid-solid (VLS) process by introducing an Au thin film (3 nm) as a catalyst. ZnO single nanowire device was ingenuously fabricated by combining conventional optical lithography and high resolution electron beam lithography and its current-voltage characteristics were measured with doing the post process to acquire reproducible performance as a chemical gas sensor. And its temperature dependent current-voltage characteristics were measured to investigate temperature dependant electrical transport. The ZnO nanowire device showed slightly non-ohmic current-voltage characteristics which may be due to back-to-back configuration of the diodes with the insulating contact barriers and showed an relatively small activation energy of 0.2 eV. To test our device as a chemical sensor, the NO 2 gas response was reported at the elevated temperature. Copyright © 2008 American Scientific Publishers All rights reserved.
키워드
Activation energy, Chemical sensor, Contact resistance, Nanowire device, ZnO
KSP 제안 키워드
Activation Energy, Au thin film, Chemical gas sensor, Contact resistance(73.40.Cg), Electrical characterization, Electrical transport, GaN epilayer, Gas response, High-resolution, NO 2, Optical lithography