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Conference Paper
Dry Etching Process for the Fabrication of Transparent InGaZnO TFTs
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- Authors
- S. M. Yoon, W. S. Cheong, C. S. Hwang, S. H. Ko Park, D. H. Cho, J. H. Shin, M. Ryu, C. W. Byun, S. Yang, J. I. Lee, S. M. Chung, H. Y. Chu, K. I. Cho
- Issue Date
- 2008-10
- Citation
- International Meeting on Information Display (IMID) 2008, pp.222-225
- Language
- English
- Type
- Conference Paper
- Project Code
- 08MB2100, Smart window with transparent electronic devices, Cho Kyoung Ik
- Abstract
- We proposed the dry etching process recipe for the fabrication of In-Ga-Zn-0 (IGZO)-based oxide TFTs, in which the etching behaviors of IGZO films were systematically investigated when the etching gas mixtures and their mixing ratios were varied. Good device characteristics of the fabricated TFT were successfully confirmed.
- KSP Keywords
- Device characteristics, Etching process, Gas mixture, InGaZnO TFTs, Oxide TFTs, dry etching