ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Metal-insulator Transition-induced Electrical Oscillation in Vanadium Dioxide Thin Film
Cited 87 time in scopus Download 0 time Share share facebook twitter linkedin kakaostory
저자
이용욱, 김봉준, 임정욱, 윤선진, 최성열, 채병규, 김경옥, 김현탁
발행일
200804
출처
Applied Physics Letters, v.92 no.16, pp.1-3
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.2911745
협약과제
08MB3100, 전기적 점프(Current Jump)를 이용한 신소자 기술, 김현탁
초록
In this letter, we report an observation of room temperature electrical oscillation in vanadium dioxide (V O2), a representative strongly correlated material showing a metal-insulator transition. An electric circuit for the oscillation is simply composed of a voltage source and two-terminal V O2 thin film device serially connected with a standard resistor. The systematic procedures where the oscillation occurred were explained based on the electrical relationship between the V O2 device and resistor, and the generation window of the oscillation was determined. In particular, the oscillation frequency could be controlled by adjusting an external voltage and increased up to <0.5 MHz. © 2008 American Institute of Physics.
KSP 제안 키워드
Correlated material, Electrical oscillation, Oscillation Frequency, Room-temperature, Strongly correlated, Vanadium dioxide thin film, Voltage source, electric circuit, metal-insulator transition, standard resistor, thin film(TF)