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학술지 Thin-film Passivation by Atomic Layer Deposition for Organic Field-effect Transistors
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저자
전하영, 신권우, 양찬우, 박찬언, 박상희
발행일
200810
출처
Applied Physics Letters, v.93 no.16, pp.1-3
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.3000017
협약과제
08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
초록
The thin-film passivation of organic field-effect transistors (OFETs) using Al Ox films grown by atomic layer deposition was investigated. A high-quality Al Ox passivation layer was deposited on OFETs at 90 °C using trimethylaluminum and water. Despite the low deposition temperature, the 50-nm -thick Al Ox passivation layers exhibited a low water-vapor-transmission-rate value of 0.0434 g m2 day. In addition, the mobility of the Al Ox -passivated OFETs was only slightly below that of the unpassivated devices (i.e., within 9%). Unlike unpassivated devices, the electric performance of the passivated OFETs remained almost unchanged after 2 months as a result of the excellent barrier properties of the passivation layer. © 2008 American Institute of Physics.
KSP 제안 키워드
Atomic Layer Deposition, Electric performance, Field-effect transistors(FETs), High-quality, Low water, Organic field-effect, barrier properties, low deposition temperature, passivation layer, thin film(TF), thin-film passivation