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12.5 Gbps Optical Modulation of Silicon Racetrack Resonator based on Carrier-depletion in Asymmetric p-n Diode
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- Authors
- Jong-Bum You, Mi Ran Park, Jeong-Woo Park, Gyung Ock Kim
- Issue Date
- 2008-10
- Citation
- Optics Express, v.16, no.22, pp.18340-18344
- ISSN
- 1094-4087
- Publisher
- Optical Society of America(OSA)
- Language
- English
- Type
- Journal Article
- Project Code
- 08MB1600, Silicon-based high-speed optical interconnection IC, Kim Gyungock
- Abstract
- We present a high speed optical modulation using carrier depletion effect in an asymmetric silicon p-n diode resonator. To optimize coupling efficiency and reduce bending loss, two-step-etched waveguide is used in the racetrack resonator with a directional coupler. The quality factor of the resonator with a circumference of 260 um is 9,482, and the DC on/off ratio is 8 dB at -12V. The device shows the 3 dB bandwidth of ~8 GHz and the data transmission up to 12.5Gbit/s. ©2008 Optical Society of America.
- KSP Keywords
- 3-dB bandwidth, Bending loss, Carrier depletion, Data transmission, Depletion effect, High Speed, PN diode, Petri net(PN), Quality-factor(Q-factor), Two-Step, coupling efficiency