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학술지 Current Flow Mechanisms of Platinum-Silicided p-Type Schottky Barrier MOSFETs
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저자
장문규, 이승재
발행일
200810
출처
Journal of the Korean Physical Society, v.53 no.4, pp.2175-2178
ISSN
0374-4884
출판사
한국물리학회 (KPS)
협약과제
08MB3600, 상용 양자암호통신시스템을 위한 요소 기술 개발, 노태곤
초록
The curent flow mechanisms of platinum-silicided p-type Schotky barier metal-oxide- semiconductor field-effect-transistors (SB-MOSFETs) are analyzed by incorporating experimental results with an analytical model. In our analysis, we find that the off-current is mainly attributed to the thermionic curent component whereas the on-current is due to the tunneling current. Since the tunneling current component rapidly increases at voltage above the threshold voltage, a lower Schotky barier height and a thinner gate oxide are esential features to achieve a higher drive curentinSB-MOSFETs.
KSP 제안 키워드
Analytical model, Field-effect transistors(FETs), Flow mechanism, Gate oxide, Metal-oxide(MOX), Off Current, Schottky barriers(SBs), Tunneling current, on-current, p-Type, threshold voltage(Vth)