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Journal Article Fabrication and Electrical Characterization of Phase-change Memory Devices with Nanoscale Self-heating-channel Structures
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Authors
Sung-Min Yoon, Soon-Won Jung, Seung-Yun Lee, Young-Sam Park, Byoung-Gon Yu
Issue Date
2008-12
Citation
Microelectronic Engineering, v.85, no.12, pp.2334-2337
ISSN
0167-9317
Publisher
Elsevier
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1016/j.mee.2008.09.023
Abstract
We proposed a material composition and an optimized patterning process for the phase-change memory devices with a nanoscale self-heating channel (NSC) structures. As a suitable composition, Ge18Sb39Te43 was employed, which is the 22% Sb-excessive phase compared with the conventional Ge2Sb2Te5. For fabricating the NSC memory devices, Ge18Sb39Te43 layer was patterned into a thin channel having enlarged pad areas at both sides end by the developed two-step dry etching technique using a TiN hard mask. The NSC memory devices showed such good behaviors as lower power operations without any degradation of switching speed and better endurance for cyclic rewritings even in the scaling regime of tens-of-nanometer size. It can be concluded from the obtained results that the proposed NSC memory devices promise the feasibility for realizing both aggressive scaling with a simpler process and enhanced memory performances for the phase-change nonvolatile memory applications. © 2008 Elsevier B.V. All rights reserved.
KSP Keywords
Channel structure, Etching technique, Lower power, Material composition, Memory applications, Nanometer-size, Nonvolatile memory(NVM), Patterning process, Phase Change Material(PCM), Self-heating, Switching speed