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학술지 Fabrication and Electrical Characterization of Phase-change Memory Devices with Nanoscale Self-heating-channel Structures
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저자
윤성민, 정순원, 이승윤, 박영삼, 유병곤
발행일
200812
출처
Microelectronic Engineering, v.85 no.12, pp.2334-2337
ISSN
0167-9317
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.mee.2008.09.023
초록
We proposed a material composition and an optimized patterning process for the phase-change memory devices with a nanoscale self-heating channel (NSC) structures. As a suitable composition, Ge18Sb39Te43 was employed, which is the 22% Sb-excessive phase compared with the conventional Ge2Sb2Te5. For fabricating the NSC memory devices, Ge18Sb39Te43 layer was patterned into a thin channel having enlarged pad areas at both sides end by the developed two-step dry etching technique using a TiN hard mask. The NSC memory devices showed such good behaviors as lower power operations without any degradation of switching speed and better endurance for cyclic rewritings even in the scaling regime of tens-of-nanometer size. It can be concluded from the obtained results that the proposed NSC memory devices promise the feasibility for realizing both aggressive scaling with a simpler process and enhanced memory performances for the phase-change nonvolatile memory applications. © 2008 Elsevier B.V. All rights reserved.
키워드
Ge-Sb-Te (GST), Nonvolatile memory, Phase-change, Self-heating
KSP 제안 키워드
Channel structure, Electrical characterization, Etching technique, Ge-Sb-Te, Lower power, Material composition, Memory applications, Nanometer size, Non-Volatile Memory(NVM), Patterning process, Phase Change Material(PCM)