ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Analysis of Etching Mechanism and Etched Slope Control of Silicon for Nanoimprinting Lithography
Cited 0 time in scopus Download 0 time Share share facebook twitter linkedin kakaostory
저자
함용현, 김용근, 백규하, 도이미, 권광호, 박강박
발행일
201107
출처
Journal of Nanoscience and Nanotechnology, v.11 no.7, pp.6523-6527
ISSN
1533-4880
출판사
American Scientific Publishers (ASP)
DOI
https://dx.doi.org/10.1166/jnn.2011.4357
초록
In the nanoimprint lithography (NIL) process, profile control of imprint masters is a very important task. Therefore, we attempted to control the etched slope of imprint masters as a function of adding O 2 to CF 4 plasma. Etched profile mechanisms and relationships between the etch kinetics and plasma chemistry were explored using zero-dimensional-based modeling. O 2 flow rate increased to 24 sccm, the Si etch rate increased l in the range I of 186-393 nm/min, while the etch rate rapidly decreased as the O 2 flow rate increases beyond 24 sccm. Meanwhile, change in the etch rate of SiO 2 followed a similar tendency as the etch rate of Si as a function of O 2 flow rate in the CF 4/O 2mixing gases. The Si and SiO 2 etch rate were expected to be closely dependent on the F radical intensity in CF 4/O 2 mixing gases. Moreover, the results of simulated normalized lateral etch critical dimension (NLECD) are in agreement with the measured NLECD as a function of O 2 flow rate in the CF 4/O 2 mixing gases. Copyright © 2011 American Scientific Publishers All rights reserved.
키워드
Etch Mechanism, Etched Profile, Nanoimprint, Silicon Master
KSP 제안 키워드
CF 4, Critical dimension, Etch mechanism, Etch rates, Flow rate, Nanoimprinting lithography, SiO 2, Slope control, etching mechanism, nanoimprint lithography, plasma chemistry