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학술지 Schottky Barrier N-Type Thin Film Transistors With Polycrystalline Silicon Channel and Er-Silicided Metallic Junctions
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저자
신진욱, 최철웅, 장문규, 조원주
발행일
200812
출처
IEEE Electron Device Letters, v.29 no.12, pp.1336-1339
ISSN
0741-3106
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LED.2008.2007511
협약과제
08MB1800, 유비쿼터스 단말용 부품 모듈, 김종대
초록
N-type Schottky barrier thin film transistors (SB-TFTs) with polycrystalline silicon channel and metallic junctions were fabricated by using Er silicidation, and electrical structural properties were compared to conventional TFTs with phosphorous-doped source/drain regions. The performances of SB-TFTs are better than that of the conventional TFTs. A forming gas annealing process leads to a great improvement in the characteristics of both devices. In particular, excellent electrical characteristics were obtained from the forming gas annealed SB-TFTs: the subthreshold swing of 180 mV/dec, the drive current of 1.47 × 10-5 A, and the on/off current ratio of 5 × 106. © 2008 IEEE.
키워드
Er silicide, Forming gas annealing (FGA), Metallic junction, Poly-Si Schottky barrier TFT (SB-TFT)
KSP 제안 키워드
Drive Current, Er silicide, Forming gas annealing, N-type, ON/OFF current ratio, Polycrystalline silicon(poly-Si), Schottky barriers(SBs), Thin-Film Transistor(TFT), annealing process, electrical characteristics, metallic junctions