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Journal Article
Transparent and Photo‐stable ZnO Thin‐film Transistors to Drive an Active Matrix Organic‐Light‐ Emitting‐Diode Display Panel
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- Authors
- Sang-Hee K. Park, Chi-Sun Hwang, Min Ki Ryu, Shin Hyuk Yang, Chun Won Byun, Jae Heon Shin, Jeong-Ik Lee, Ki Moon Lee, Min Suk Oh, Seong Il Im
- Issue Date
- 2009-02
- Citation
- Advanced Materials, v.21, no.6, pp.678-682
- ISSN
- 0935-9648
- Publisher
- WILEY-VCH Verlag GmbH & Co. KGaA
- Language
- English
- Type
- Journal Article
- Abstract
- Photo and electrically stable transparent ZnO Thin Film Transistors (TFT) for an Active Matrix- Organic Light Emitting Diode (AM-OLED) panel was fabricated. The fabrication of a bottom emission AM-OLED back panel with a transparent ZnO-TFT array, 150 NM thick Indium-Tin-Oxide (ITO) glass was used for the substrate. A 20 nm thick ZnO semiconductor film was deposited by means of plasma assisted atomic layer deposition (PEALD), after source/drain patterning of ITO by wet etching. Trimethylaluminium (TMA) was used as an Al precursor in all the ALD experiments. The electrically table ZnO-TTFT showed quite good photo-stability and full transparent ZnO-TFT array demonstrates a successful operation of a 2.5 inch sized bottom emission AM-blue OLED panel. ZnO-TTFT with a water-vapor precursor processed Al2O3 dielectric is very effective as a driver for an efficient AM-OLED display.
- KSP Keywords
- 20 nm, AM-OLED, Blue OLEDs, Display Panel, Indium Tin Oxide(ITO), OLED display, Plasma assisted atomic layer deposition(PA-ALD), Semiconductor films, TFT array, Thin-Film Transistor(TFT), Water vapor