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학술지 Transparent and Photo-stable ZnO Thin-film Transistors to Drive an Active Matrix Organic-Light- Emitting-Diode Display Panel
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저자
박상희, 황치선, 유민기, 양신혁, 변춘원, 신재헌, 이정익, 이기문, 오민석, 임성일
발행일
200902
출처
Advanced Materials, v.21 no.6, pp.678-682
ISSN
0935-9648
출판사
WILEY-VCH Verlag GmbH & Co. KGaA
DOI
https://dx.doi.org/10.1002/adma.200801470
협약과제
08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
초록
Photo and electrically stable transparent ZnO Thin Film Transistors (TFT) for an Active Matrix- Organic Light Emitting Diode (AM-OLED) panel was fabricated. The fabrication of a bottom emission AM-OLED back panel with a transparent ZnO-TFT array, 150 NM thick Indium-Tin-Oxide (ITO) glass was used for the substrate. A 20 nm thick ZnO semiconductor film was deposited by means of plasma assisted atomic layer deposition (PEALD), after source/drain patterning of ITO by wet etching. Trimethylaluminium (TMA) was used as an Al precursor in all the ALD experiments. The electrically table ZnO-TTFT showed quite good photo-stability and full transparent ZnO-TFT array demonstrates a successful operation of a 2.5 inch sized bottom emission AM-blue OLED panel. ZnO-TTFT with a water-vapor precursor processed Al2O3 dielectric is very effective as a driver for an efficient AM-OLED display.
KSP 제안 키워드
20 nm, AM-OLED, Blue OLEDs, Display Panel, OLED display, Organic light-emitting diodes(OLEDS), Plasma assisted atomic layer deposition(PA-ALD), Semiconductor films, TFT array, Thin-Film Transistor(TFT), Water vapor