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학술지 20-nm-gate-length Erbium-/platinum-silicided n-/p-type Schottky Barrier Metal-oxide-semiconductor Field-effect Transistors
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저자
장문규, 최철종, 이성재
발행일
200811
출처
Applied Physics Letters, v.93 no.19, pp.1-3
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.3025726
협약과제
08MB3600, 상용 양자암호통신시스템을 위한 요소 기술 개발, 노태곤
초록
20-nm -gate-length erbium-/platinum-silicided n-/ p-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) were manufactured. The manufactured 20-nm -gate-length n-p-type SB-MOSFETs showed large on/off current ratio (> 106) with low leakage current less than 10-5 μA/μm due to the existence of the Schottky barrier between source and channel region. The saturation currents were 550 and -376 μA/μm when drain and gate voltages are 2-2 and 3-3 V, for the n-p-type SB-MOSFET, respectively. © 2008 American Institute of Physics.
KSP 제안 키워드
3 V, AND gate, Barrier Metal, Field-effect transistors(FETs), Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), ON/OFF current ratio, SB-MOSFET, Schottky barriers(SBs), low leakage current, p-Type