고밀도 트렌치 공정을 위해 HBr 가스를 주로하고 CF₄, SiF₄, NF₃, He-O₂ 등을 첨가 가스로 이용하여 트렌치 공정을 하였다. 트렌치 공정 시 첨가가스 비에 따라 트렌치 형상이 다양하게 되었다. 이러한 형상은 트렌치 소자 제조 시 트렌치 내부를 채울 경우 여러 가지 어려움이 발생되는데, 특히 트렌치 내부가 잘 채워지지 않고 void가 생길 경우 소자의 신뢰성에 많은 영향을 미칠 수 있다. 본 연구에서는 고밀도 트렌치를 병렬로 형성한 후 형성된 트렌치 내부를 잘 채울 수 있는 고밀도 트렌치 공정을 연구하였다. 트렌치 형성 시 HBr을 주가스로 하고, NF₃, CF₄, SiF₄를 비율을 각각 59:27:7:7로 했을 때 수십만 트렌치 형성 각도가 약 89°로 매우 좋은 형상을 얻었다.
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