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Journal Article
Analytical Modeling of IGZO Thin-Film Transistors Based on the Exponential Distribution of Deep and Tail State
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- Authors
- Jae Heon Shin, Chi Sun Hwang, Woo Seok Cheong, Sang Hee Ko Park, Doo Hee Cho, Min Ki Ryu, Sung Min Yoon, Chun Won Byun, Shin Hyuk Yang, Hye Yong Chu, Kyoung Ik Cho
- Issue Date
- 2009-01
- Citation
- Journal of the Korean Physical Society, v.54, no.1, pp.527-530
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- We demonstrate that the current-voltage (I-V) characteristics of In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) can be modeled by using the well-known physical model based on the exponential density of deep and tail states. The threshold voltage and the voltage-dependent field-effect mobility can be determined without ambiguity by using the newly proposed scheme. Both the transfer and the output curves of the device are well reproduced by using the proposed modeling scheme with the obtained parameters.
- KSP Keywords
- Analytical Modeling, Current-voltage (I-V) characteristics, Exponential distribution, In-Ga-Zn-O, Initialization Vector(IV), Physical model, Thin-Film Transistor(TFT), field-effect mobility, model-based, tail states, thin film(TF)