상세정보
학술지
Analytical Modeling of IGZO Thin-Film Transistors Based on the Exponential Distribution of Deep and Tail States
- 발행일
- 200901
- 출처
- Journal of the Korean Physical Society, v.54 no.1, pp.527-530
- ISSN
- 0374-4884
- 출판사
- 한국물리학회 (KPS)
- 협약과제
- 08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- We demonstrate that the current-voltage (I-V) characteristics of In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) can be modeled by using the well-known physical model based on the exponential density of deep and tail states. The threshold voltage and the voltage-dependent field-effect mobility can be determined without ambiguity by using the newly proposed scheme. Both the transfer and the output curves of the device are well reproduced by using the proposed modeling scheme with the obtained parameters.
- 키워드
- Analytical modeling, Deep state, IGZO, Oxide TFT, Tail state, Threshold voltage
- KSP 제안 키워드
- Analytical Modeling, Current-voltage (I-V) characteristics, In-Ga-Zn-O(IGZO), Initialization Vector(IV), Oxide TFTs, Physical model, Thin-Film Transistor(TFT), exponential distribution, field-effect mobility, model-based, tail states