ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Transparent Oxide Thin-Film Transistors Composed of Al and Sn-Doped Zinc Indium Oxide
Cited 18 time in scopus Download 4 time Share share facebook twitter linkedin kakaostory
저자
조두희, 양신혁, 변춘원, 유민기, 박상희, 황치선, 윤성민, 추혜용
발행일
200901
출처
IEEE Electron Device Letters, v.30 no.1, pp.48-50
ISSN
0741-3106
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LED.2009.2008732
협약과제
08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
초록
We have fabricated the transparent bottom gate thin-film transistors (TFTs) using Al and Sn-doped zinc indium oxide (AT-ZIO) as an active layer. The AT-ZIO active layer was deposited by RF magnetron sputtering at room temperature, and the AT-ZIO TFT showed a field effect mobility of 15.6 cm2/Vs even before annealing. The mobility increased with increasing the In2O3 content and postannealing temperature up to 250 °C. The AT-ZIO TFT exhibited a field effect mobility of 30.2 cm2/Vs, a subthreshold swing of 0.17 V/dec, and an on/off current ratio of more than 102. © 2008 IEEE.
키워드
Oxide, Sputtering, Thin-film transistor (TFT), Transparent