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학술지 Enhancement of Program Speed in Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS for NAND-Type Flash Memory
Cited 18 time in scopus Download 0 time Share share facebook twitter linkedin kakaostory
저자
최성진, 한진우, 김성호, 장문규, 김진수, 김광희, 이기성, 오재섭, 송명호, 박윤창, 김정우, 최양규
발행일
200901
출처
IEEE Electron Device Letters, v.30 no.1, pp.78-81
ISSN
0741-3106
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LED.2008.2008667
협약과제
08MB1800, 유비쿼터스 단말용 부품 모듈, 김종대
초록
A dopant-segregated (DS) Schottky-barrier (DSSB) FinFET SONOS for NAND Flash memory with a proposed architecture is demonstrated for the first time. A DSSB technique with a nickel-silicided source/drain (S/D) is integrated in the FinFET with a 30-50-nm range of fin width. Compared with the conventional FinFET SONOS, the DSSB FinFET SONOS boasts very fast programming time with low voltage. For a programming state, hot electrons triggered by sharp band bending at the DS S/D region are used. As a result, a threshold voltage (Vth) shift of 4.5 V is achieved in a fast programming time of 100 ns. © 2008 IEEE.
키워드
Dopant segregated (DS), FinFET, Flash memory, Hot electrons, NAND Flash, Nonvolatile memory, Schottky-barrier MOSFET, Silicon-oxide-nitride-oxide-silicon (SONOS), SONOS memory
KSP 제안 키워드
Fin width, Nand flash memory, Non-Volatile Memory(NVM), Oxide-nitride-oxide, Schottky barriers(SBs), Silicon oxide, band bending, dopant segregated, hot electrons, low voltage, nm range