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Journal Article
In Situ-Grown Hexagonal Silicon Nanocrystals in Silicon Carbide-Based Films
- Authors
- Tae-Youb Kim, Chul Huh, Nae-Man Park, Cheol-Jong Choi, Maki Suemitsu
- Issue Date
- 2012-12
- Citation
- Nanoscale Research Letters, v.7, pp.1-5
- ISSN
- 1931-7573
- Publisher
- Springer
- Language
- English
- Type
- Journal Article
- Abstract
- Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasmaenhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. The peak position of the photoluminescence can be controlled within a wavelength of 500 to 650 nm by adjusting the flow rate of the silane gas. We suggest that this phenomenon is attributed to the quantum confinement effect of hexagonal Si-NCs in silicon carbide-based film with a change in the sizes and emission states of the NCs. © 2012 Kim et al.
- KSP Keywords
- Amorphous silicon carbide, Chemical vapor deposition method, Electron diffraction pattern, Electron microscopy(SEM), Flow rate, Peak position, Phase Structure, Quantum confinement effect, Silicon nanocrystals(Si NCs), Transmission Electron Microscopy(TEM), high-resolution transmission electron microscopy(HRTEM)
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
(CC BY)
