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학술지 In Situ-Grown Hexagonal Silicon Nanocrystals in Silicon Carbide-Based Films
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저자
김태엽, 허철, 박래만, 최철종, Maki Suemitsu
발행일
201212
출처
Nanoscale Research Letters, v.7, pp.1-5
ISSN
1931-7573
출판사
Springer
DOI
https://dx.doi.org/10.1186/1556-276X-7-634
협약과제
12VB1300, 에너지 절감을 위한 7인치기준 2W급 환경적응 디스플레이 신모드 핵심 원천 기술 개발, 추혜용
초록
Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasmaenhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. The peak position of the photoluminescence can be controlled within a wavelength of 500 to 650 nm by adjusting the flow rate of the silane gas. We suggest that this phenomenon is attributed to the quantum confinement effect of hexagonal Si-NCs in silicon carbide-based film with a change in the sizes and emission states of the NCs. © 2012 Kim et al.
키워드
Hexagonal silicon phase structure, In situ-formed Si-NCs, Silicon carbide-based films, Silicon nanocrystals
KSP 제안 키워드
Amorphous silicon carbide, Chemical vapor deposition method, Electron diffraction pattern, Flow rate, Peak position, Phase Structure, Quantum confinement effects, Silicon nanocrystals(Si NCs), Transmission Electron Microscopy(TEM), high-resolution transmission electron microscopy, silicon carbide(3C-SiC)