상세정보
학술지
In Situ-Grown Hexagonal Silicon Nanocrystals in Silicon Carbide-Based Films
- 발행일
- 201212
- 출처
- Nanoscale Research Letters, v.7, pp.1-5
- ISSN
- 1931-7573
- 출판사
- Springer
- 협약과제
- 12VB1300, 에너지 절감을 위한 7인치기준 2W급 환경적응 디스플레이 신모드 핵심 원천 기술 개발, 추혜용
- 초록
- Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasmaenhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. The peak position of the photoluminescence can be controlled within a wavelength of 500 to 650 nm by adjusting the flow rate of the silane gas. We suggest that this phenomenon is attributed to the quantum confinement effect of hexagonal Si-NCs in silicon carbide-based film with a change in the sizes and emission states of the NCs. © 2012 Kim et al.
- 키워드
- Hexagonal silicon phase structure, In situ-formed Si-NCs, Silicon carbide-based films, Silicon nanocrystals
- KSP 제안 키워드
- Amorphous silicon carbide, Chemical vapor deposition method, Electron diffraction pattern, Flow rate, Peak position, Phase Structure, Quantum confinement effects, Silicon nanocrystals(Si NCs), Transmission Electron Microscopy(TEM), high-resolution transmission electron microscopy, silicon carbide(3C-SiC)