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학술지 Influence of Seed Layers on the Vertical Growth of ZnO Nanowires
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저자
최춘기, 강영훈, 김용성, 김준관
발행일
200903
출처
Materials Letters, v.63 no.8, pp.679-682
ISSN
0167-577X
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.matlet.2008.12.025
협약과제
08IB1500, 나노 구조 무반사 필름 제작기술 개발, 최춘기
초록
We synthesized vertically aligned ZnO nanowires on SiO2 wafer <100> using the Au, ZnO and Au/ZnO seed layers through the physical vapor deposition process. The growth direction of ZnO nanowire was controlled by using the three different seed layers. From the XRD results, we observed the highest intensity of the (002) peak on the Au/ZnO seed layer among the three seed layers. The SEM images show that all of the ZnO nanowires have an average diameter of about 100 ~ 200혻nm and a length of about 5혻μm, and the nanowires grown on the Au/ZnO seed layer are oriented the most perpendicularly to the substrate surface. From the PL analysis, we observed that the intensity of broad emissions at 400-600혻nm relating the green emission for the ZnO nanowires on the Au/ZnO seed layer was much weaker than that for the ZnO nanowires on the ZnO seed layer. The experiment results indicate that the selection of seed layers is important to grow nanowires vertically for the application of nanoscale devices. © 2008 Elsevier B.V. All rights reserved.
키워드
Catalysts, Chemical vapor deposition, Crystal growth, Nanostructure, Nanowire, Zinc oxide
KSP 제안 키워드
Average diameter, Chemical Vapor Deposition, Crystal growth, Experiment results, Green emission, Nanoscale devices, Physical vapor deposition process, SEM images, Substrate surface, Vertical growth, Zinc oxide(ZnO)