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학술지 Effect of Silicidation on Silicon-Based Thin Film Resistors in SiGe Integrated Circuits
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저자
이상흥, 이승윤, 박찬우, 서동우
발행일
200904
출처
Journal of Materials Science : Materials in Electronics, v.20 no.4, pp.354-359
ISSN
0957-4522
출판사
Springer
DOI
https://dx.doi.org/10.1007/s10854-008-9733-y
협약과제
08ZB1300, 실리콘-게르마늄 양자채널 나노 신소자 기술 연구, 이상흥
초록
The resistance variation of the silicon-germanium (SiGe) thin film resistor caused by the fabrication process of SiGe integrated circuits (ICs) was investigated. The SiGe resistor and the Si resistor were made of the thin films identical with the p-type SiGe base layer and the n-type Si emitter layer of the SiGe hetero-junction bipolar transistor, respectively. The range of the resistance value of the SiGe resistor was much larger than that of the Si resistor, and an abnormally high resistance of the SiGe resistor was often observed. Ti-B precipitates and Ti(Si 1-xGe x) 2 protrusions were created as the result of the Ti silicidation of the p-type SiGe layer, whereas no precipitates and protrusions were generated in the case of the n-type Si layer. It was confirmed by scanning electron microscopy that the nonuniform resistance of the SiGe resistor was induced by the removal of the protrusions and underlying field oxides in the contact window. Resistance uniformity of the SiGe resistor was much improved by increasing the contact size. The simulation result of the detrimental influence of the resistance change on ICs indicated that the fabrication process and the structure of the thin film resistor should be optimized for enhancing IC reliability. © Springer Science+Business Media, LLC 2008.
KSP 제안 키워드
Base layer, Heterojunction Bipolar Transistors(HBTs), High resistance, IC Reliability, Integrated circuit, Resistance change, Scanning electron microscopy(S.E.M.), Si layer, Silicon-germanium(SiGe), contact size, emitter layer