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Enhancement in the Gain of Quantum Dot Laser by Increasing Overlap Integral between Electron and Hole Wave-Functions
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- Authors
- Byoung Gu Jo, Young Sin Yang, Jae Su Kim, Myoung Kuk Ko, Kwang Jae Lee, Cheul Ro Lee, Jin Soo Kim, Byoung Seok Choi, Dae Kon Oh, Jae Young Leem, Jong Su Kim
- Issue Date
- 2009-05
- Citation
- Thin Solid Films, v.517, no.14, pp.3983-3986
- ISSN
- 0040-6090
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- We report the influences of quantum dot (QD) shape on the lasing characteristics such as threshold current, slope efficiency, and wavelength stability. The average heights of the shape-engineered InAs/InAlGaAs QDs (SEQDs) and the conventionally-grown Stranski-Krastanov InAs QDs (CQD) were 10 짹 0.5 and 2.5 짹 0.5혻nm, respectively. For the cavity length of 0.5혻mm, the threshold current of the laser diodes (LDs) with the InAs/InAlGaAs SEQDs as an active layer (SEQD-LD) was decreased by 3.6 times smaller than that of the LDs with the InAs CQDs (CQD-LD). Also the slope efficiency for the SEQD-LD was increased to 0.15 from 0.087혻W/A of the CQD-LD. While the lasing wavelength of the CQD-LD was red-shifted by 0.032혻μm with increasing cavity length from 0.5 to 0.75혻mm, the lasing emission of the SEQD-LD was red-shifted only by 0.012혻μm with increasing cavity length from 0.5 to 1.5혻mm. From these results, the gain of the QDLDs was enhanced by increasing the height of the QDs due to the enhancement in the confinement of the carrier wave-functions. © 2009 Elsevier B.V. All rights reserved.
- KSP Keywords
- Active Layer, Carrier wave, Cavity length, InAs QDs, Laser diode, Lasing characteristics, Overlap integral, Quantum dot(Qdot), Quantum dot laser(QDL), Shape-engineered, Slope efficiency