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Monolithic double rectangular spiral thin-film inductors implemented with NiFe magnetic cores for on-chip dc–dc converter applications
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- Authors
- Sang Gi Kim, Hoon Soo Park, Jin Gun Koo, Jong Dae Kim, Tae Moon Rho, Yong Hyun Lee, Bo Woo Kim, Jin Yeong Kang
- Issue Date
- 2009-05
- Citation
- Thin Solid Films, v.517, no.14, pp.4204-4206
- ISSN
- 0040-6090
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- This paper describes a simple, on-chip complimentary metal oxide semiconductor (CMOS) compatible thin-film inductor applied for the dc-dc converters. The double rectangular spiral types of the thin-film inductors were implemented with 15혻μm-thick copper films upon 2.5혻μm thick of the NiFe magnetic core. Prior to fabricating a high-voltage CMOS dc-dc converter circuit, the NiFe magnetic core was deposited on the polyimide film. Adapting a double-rectangular structure, the fabricated monolithic inductor exhibited not only high inductance of 1.6혻μH but also high quality factor of 11.2 at 5혻MHz. To simplify the integration process, the planarization process for the top magnetic core was eliminated. The performance of the dc-dc converter which combined with our proposed inductors was evaluated at a high power efficiency of 81% when the converter operated at a frequency of 5혻MHz corresponding to input and output voltages of 3.3혻V and 8.1혻V, respectively. © 2009 Elsevier B.V. All rights reserved.
- KSP Keywords
- Complementary metal-oxide-semiconductor(CMOS), Converter Circuit, DC-DC Converters, High-Voltage CMOS, Input-Output, Metal-oxide(MOX), NiFe magnetic core, Planarization process, Quality factor(VSWR and Q), Rectangular Spiral, Rectangular structure