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학술지 Effect of UV/ozone Treatment on Hysteresis of Pentacene Thin-Film Transistor with Polymer Gate Dielectric
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저자
구재본, 강승열, 유인규, 서경수
발행일
200905
출처
Solid-State Electronics, v.53 no.6, pp.621-625
ISSN
0038-1101
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.sse.2009.04.005
협약과제
09IC1900, 개별물품 단위 응용을 위한 차세대 RFID 기술 개발, 채종석
초록
Pentacene organic thin-film transistors (OTFTs) having acrylic polymer gate dielectric were fabricated with the change of UV/ozone treatment on the surface of gate dielectric. As UV/ozone exposure time increased, threshold voltage was shifted towards positive values from -0.7 V to 6.2 V and saturation mobility was dramatically increased from 0.07 cm2/Vs to 2.66 cm2/Vs while the amount of hysteresis was enlarged. The increase of hysteresis and the non-saturation behavior of output characteristics were attributed to the generation of hydroxyl groups through polymer dissociation during UV/ozone treatment because the hydroxyl groups making the surface of polymer gate dielectric more polar played as electron traps. © 2009 Elsevier Ltd. All rights reserved.
키워드
Hysteresis, Organic thin-film transistor (OTFT), Pentacene, Surface treatment, UV/ozone
KSP 제안 키워드
Electron traps, Exposure time, Non-saturation, Organic thin-film transistors (otfts), Saturation mobility, Surface treatments, Thin-Film Transistor(TFT), UV/Ozone treatment, acrylic polymer, gate dielectric, hydroxyl group