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학술지 Low-Frequency Noise in Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors
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저자
이정민, 정우석, 황치선, 조인택, 권혁인, 이종호
발행일
200905
출처
IEEE Electron Device Letters, v.30 no.5, pp.505-507
ISSN
0741-3106
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LED.2009.2015783
협약과제
08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
초록
We have investigated the low-frequency noise (LFN) properties of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) as a function of frequency, bias, and channel length of devices. The measured noise power spectral density of drain current (SiD) shows that the low-frequency noise in a-IGZO TFTs obeys the classical 1/f noise theory, i.e., it fits well to a 1/f款 power law with 款 ~ 1 in the frequency range of 10 Hz to 1 kHz. From the dependence of normalized noise power spectral density (SiD/ID2) on the gate voltage, mobility fluctuation is considered as a dominant LFN mechanism in a-IGZO TFTs. The magnitude of SiD/ID2 is inversely proportional to the channel length of devices, which indicates that contact noise is insignificant in a-IGZO TFTs. © 2009 IEEE.
키워드
1/f noise theory, Amorphous indium-gallium-zinc oxide (a-IGZO), Low-frequency noise (LFN), Mobility fluctuation, Thin-film transistors (TFTs)
KSP 제안 키워드
1/f Noise, Channel Length, Drain current, Frequency Range, Low frequency noise, Noise power, Normalized noise, Thin-Film Transistor(TFT), Zinc oxide(ZnO), a-IGZO TFTs, amorphous indium-gallium-zinc oxide(a-IGZO)