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학술지 Effect of Deposition Conditions and Crystallinity of Substrate on Phase Transition of Hydrogenated Si Films
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김준관, 윤선진, 임정욱, 이성현
Journal of the Electrochemical Society, v.158 no.7, pp.D430-D434
Electrochemical Society (ECS)
10MB6100, 광캡쳐 구조 반사방지막 및 조성기울기를 갖는 Si/SiGe 박막 태양전지 기술 개발, 윤선진
Hydrogenated intrinsic Si (Si:H) thin films were deposited by a plasma-enhanced chemical vapor deposition technique, and the effect of the SiH4 flow rate ([SiH4]) and hydrogen dilution ratio (R) on the crystalline phase transition was studied using Raman spectroscopy and high-resolution transmission electron microscopy. The crystalline volume fraction (Xc) was strongly affected by [SiH4] as well as R, and higher Xc could be achieved by using a lower [SiH4] at the same R. The dependence of phase transition on the crystallinity of the under-lying layer was also investigated by depositing Si:H films on various substrates. To evaluate the effects of [SiH4] and R on the quality of amorphous-Si:H (a-Si:H) films, etch rates and absorption coefficients were obtained by an H2-plasma etching process and UV-Vis spectrophotometry, respectively. Even under the deposition condition resulting in a-Si:H films, the deposition rate decreased by a factor of 3 to 4.6, and the film density considerably increased as R increased from 4 to 19. On the other hand, the absorption coefficient very slightly decreased with R. The presence of microcrystalline Si:H could be observed only from the samples deposited with R19 when the film was deposited on amorphous substrate. © 2011 The Electrochemical Society.
KSP 제안 키워드
Absorption Coefficient, Crystalline phase transition, Crystalline volume fraction, Deposition conditions, Effect of deposition, Etch rates, Film density, Flow rate, Hydrogen dilution ratio, Microcrystalline Si, Plasma etching process