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학술대회 Effects of Active Thickness in Oxide Semiconductor TFTs
Cited 8 time in scopus Download 0 time Share share facebook twitter linkedin kakaostory
저자
황치선, 박상희, 정우석, 신재헌, 양신혁, 변춘원, 유민기, 조두희, 윤성민, 정승묵, 추혜용, 조경익
발행일
200901
출처
Society for Information Display (SID) International Symposium 2009, pp.1107-1109
DOI
https://dx.doi.org/10.1889/1.3256478
협약과제
09MB2900, 투명전자 소자를 이용한 스마트 창, 조경익
초록
The effects of active thickness on the characteristics of oxide TFTs were investigated for the case of ZnO TFT and IGZO TFT. As the decrease of active thickness, the Von (Turn-on Voltage of TFT) was shifted to near zero Volt and negative shift of Von as decrease of channel length was also diminished. The overall performance (including subthreshold swing and leakage currents) was improved with thinner active layer. This behavior could be explained under the consideration of unintentional n-type doping in active layer. But, for the constant-current stress, thinner active layer TFT showed less stable behavior.
KSP 제안 키워드
Active Layer, Channel Length, Constant current(CC), IGZO TFTs, Leakage current, Negative shift, Overall performance, Oxide TFTs, Oxide semiconductor, Turn-on voltage, current stress