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학술대회 Al and Sn-Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back-Plane
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저자
조두희, 양신혁, 박상희, 변춘원, 윤성민, 이정익, 황치선, 추혜용, 조경익
발행일
200906
출처
Society for Information Display (SID) International Symposium 2009, pp.280-283
DOI
https://dx.doi.org/10.1889/1.3256763
협약과제
08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
초록
We have fabricated the transparent bottom gate TFTs using Al and Sn-doped zinc indium oxide (AT-ZIO) as an active layer. The AT-ZIO active layer was deposited by RF magnetron sputtering at room temperature, and AT-ZIO TFT showed a field effect mobility of 15.6 cm2/Vs even before annealing. The mobility increased with increasing In2O3 content and post-annealing temperature. The AT-ZIO TFT exhibited a field effect mobility of 33 cm2/Vs, a subthreshold swing of 0.08 V/dec, and an on/off current ratio of more than 109 after Al2O3 passivation and post-annealing. We have fabricated AMOLED panels with the bottom gate AT-ZIO TFT back-plane successfully.
KSP 제안 키워드
Active Layer, Annealing temperature, Bottom gate, ON/OFF current ratio, Oxide thin films, Post-annealing, Room-temperature, Sn-doped, Thin-Film Transistor(TFT), field-effect mobility, rf Magnetron sputtering