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학술지 Dependences of the Characteristics of an InGaP/GaAs HBT for Applications in Power Amplifiers on the Structural Parameters
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저자
민병규, 윤형섭, 이종민, 김성일, 김해천, 최일환, 장경욱
발행일
201108
출처
한국물리학회, v.59 no.21, pp.435-438
ISSN
0374-4884
출판사
한국물리학회
DOI
https://dx.doi.org/10.3938/jkps.59.435
협약과제
11MB3400, 무선통신 /xAN을 위한 개방형 Power Amplifier 플랫폼 기술, 윤형섭
초록
In this paper, InGaP/GaAs heterojunction bipolar transistor (HBT) devices were fabricated with various distances between the electrodes and the collector mesa, various widths of the emitter electrode and various thicknesses of the nitride passivation film. Cutoff frequencies and maximum oscillation frequencies of the devices were above 40 GHz and above 62 GHz, respectively. These values are considered sufficient for applications to power amplifiers at frequencies up to 5.5 GHz. On the other hand, the devices designed to obtain reproducibility through fabrication process showed a slight degradation in the frequency characteristics but a substantial enhancement of uniformity at the emitter-collector breakdown voltage (BVceo).
키워드
GaAs, HBT, InGaP, Power amplifier, Uniformity
KSP 제안 키워드
5 GHz, Breakdown voltage(BDV), Cut-off frequency, Frequency characteristics, GaAs heterojunction bipolar transistor, Heterojunction Bipolar Transistors(HBTs), InGaP/GaAs HBT, InGaP/GaAs heterojunction, Nitride passivation, Oscillation Frequency, Passivation film