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학술지 Comparative Study of the Low-Frequency-Noise Behaviors in a-IGZO Thin-Film Transistors With Al2O3 and Al2O3/SiNx Gate Dielectrics
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저자
조인탁, 정우석, 황치선, 이정민, 권혁인, 이종호
발행일
200908
출처
IEEE Electron Device Letters, v.30 no.8, pp.828-830
ISSN
0741-3106
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LED.2009.2023543
협약과제
09MB2900, 투명전자 소자를 이용한 스마트 창, 조경익
초록
A comparative study is made of the low-frequency noise (LFN) in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with Al2O3 and AI2O3/ SiN?? gate dielectrics. The LFN is proportional to 1/f款, with AI2O3 /SiN?? for both devices, but the normalized noise for the AI2O3/SiN?? device is two to three orders of magnitude lower than that for the AI2O3 device. The mobility fluctuation is the dominant LFN mechanism in both devices, but the noise from the source/drain contacts becomes comparable to the intrinsic channel noise as the gate overdrive voltage increases in AI2O3/SiN?? devices. The SiN慣 interfacial layer is considered to be very effective in reducing LFN by suppressing the remote phonon scattering from the AI2O3 dielectric. Hooge's parameter is extracted to ~ 6.0 × 10-3 in Al2 O3/SiN?? devices. © 2009 IEEE.
키워드
Amorphous indium-gallium-zinc oxide (a-IGZO), Gate dielectrics, Low-frequency noise (LFN), Mobility fluctuation, Remote phonon scattering, Thin-film transistors (TFTs)
KSP 제안 키워드
Low frequency noise, Normalized noise, Orders of magnitude, Remote phonon scattering, Thin-Film Transistor(TFT), Zinc oxide(ZnO), amorphous indium-gallium-zinc oxide(a-IGZO), channel noise, comparative study, gate dielectric, interfacial layer