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학술지 In-Ga-Zn-Oxide Thin-Film Transistors with Sb2TeOx Gate Insulators Fabricated by Reactive Sputtering Using a Metallic Sb2Te Target
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저자
정우석
발행일
201103
출처
한국물리학회, v.58 no.3, pp.608-611
ISSN
0374-4884
출판사
한국물리학회
DOI
https://dx.doi.org/10.3938/jkps.58.608
협약과제
10MB6800, 디스플레이용 산화물 반도체 조성 및 고밀도 산화물 반도체 타켓 개발, 정우석
초록
Using reactive sputtering, we made transparent amorphous Sb2TeOx thin films from a metallic Sb2Te target in an oxidizing atmosphere. In-Ga-Zn-oxide thin-film transistors (IGZO TFTs) with Sb2TeOx gate insulators deposited at room temperature showed a large hysteresis with a counterclockwise direction, which was caused by mobile charges in the gate insulators. The problems of the mobile charges was solved by using Sb2TeOx films formed at 250 °C. After the IGZO TFT had been annealed at 200 °C for 1 hour in an O2 ambient, the mobility of the IGZO TFT was 22.41 cm2/Vs, and the drain current on-off ratio was ~108.
키워드
IGZO, Oxide semiconductor, Reactive sputtering, Sb TeO 2 x, Thin-film transistor
KSP 제안 키워드
Drain current, Ga-Zn, Gate insulator, IGZO TFTs, Metallic Sb, Mobile charges, Oxide semiconductor, Oxidizing atmosphere, Reactive sputtering, Room-temperature, TeO 2