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학술지 Annealing-Induced Modifications of Carrier Dynamics and Plasmon-Phonon Coupling in Low-Temperature-Grown GaAs
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저자
김창섭, 김지희, 이기주, 윤두협, 강광용
발행일
200908
출처
Journal of the Korean Physical Society, v.55 no.2, pp.630-635
ISSN
0374-4884
출판사
한국물리학회 (KPS)
DOI
https://dx.doi.org/10.3938/jkps.55.630
초록
The annealing temperature dependence of the carrier dynamics was studied for a GaAs layer grown at 290 °C by using molecular beam epitaxy. The modified carrier lifetime is interpreted to be a result of the increased defect-to-defect distance caused by the aggregation process of As-related point defects. The disappearance of the plasmon-phonon coupling and the carrier-induced phonon dephasing, which are observed in coherent phonon experiments for the layer annealed at 400 °C, is consistent with the instantaneous trapping of photoexcited carriers as, observed in pump-probe measurements.
키워드
Carrier dynamics, Lt-gaas, Plasmon-phonon coupling
KSP 제안 키워드
Aggregation process, Annealing temperature, Carrier dynamics, Coherent phonon, LT-GaAs, Low temperature(LT), Molecular beam epitaxy(MBE), Plasmon-phonon coupling, carrier lifetime, low-temperature grown GaAs, point defects