A 6-bit MMIC digital attenuator applicable to X-band TR module has been developed by using 0.5㎛ GaAs pHEMT processes. The Switched-T attenuator scheme and the switched-path attenuator scheme were adopted to obtain low insertion loss and small phase variation, respectively. Resistors and transmission lines are optimized to achieve the digital attenuator with high attenuation accuracy and small phase variation. The digital attenuator has RMS error of 0.4㏈, resolution of 0.5㏈ and dynamic range of 31.5㏈. The measurement results show that in-out VSWRs are less than 1.5, phase variation is from -7 to +2 degrees and IIP3 is 36.5㏈m.
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J. Kim et. al, "Trends in Lightweight Kernel for Many core Based High-Performance Computing", Electronics and Telecommunications Trends. Vol. 32, No. 4, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
J. Sim et.al, “the Fourth Industrial Revolution and ICT – IDX Strategy for leading the Fourth Industrial Revolution”, ETRI Insight, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
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