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학술지 Improvement of Operational Stability in SET States of Phase-Change-Type Nonvolatile Memory Devices using Sb-Rich Phase of Ge-Sb-Te Alloys
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저자
윤성민, 이승윤, 정순원, 박영삼, 유병곤
발행일
200905
출처
Solid-State Electronics, v.53 no.5, pp.557-561
ISSN
0038-1101
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.sse.2009.02.004
초록
For realizing the next-generation phase-change memories (PCM), it is required to reduce the fluctuation of resistance values in SET state. The Sb-rich phase of Ge2 Sb2 Te5 was proposed to fulfill the complete crystallization process at each SET programming and the PCM devices were fabricated by using the double-layered phase-change materials composed of Ge2 Sb2 Te5 and Ge18 Sb39 Te43. It was found that the SET resistances and their fluctuation were reduced as the increase of volume ratio of the Ge18 Sb39 Te43. We can conclude that the compositional modification into the Sb-rich phase can be a good way for improving the SET performances for the PCM applications. © 2009 Elsevier Ltd. All rights reserved.
키워드
68.35.Rh, 68.55.Nq, 72.15.-v, 73.61.Jc, 85.30.-z, Ge Sb Te (GST) 2 2 5, Nonvolatile memory, Phase-change, PRAM, Stability
KSP 제안 키워드
72.15.-v, Complete crystallization, Double layered, Ge-Sb-Te, Next-generation, Non-Volatile Memory(NVM), Nonvolatile memory devices, Operational stability, Phase Change Material(PCM), Volume ratio, crystallization process