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학술지 Surface Characteristics of Parylene-C Films in an Inductively Coupled O2/CF4 Gas Plasma
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저자
함용현, D.A.Shutov, 백규하, 도이미, 김광수, 이치우, 권광호
발행일
201009
출처
Thin Solid Films, v.518 no.22, pp.6378-6381
ISSN
0040-6090
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.tsf.2010.03.138
초록
In this article, we report the results obtained from a study carried out on the inductively coupled plasma (ICP) etching of poly-monochloro-para-xylylene (parylene-C) thin films using an O2/CF4 gas mixture. The effects of adding CF4 to the O2 plasma on the etch rates were investigated. As the CF4 gas fraction increases up to approximately 16%, the polymer etch rate increases in the range of 277-373 nm/min. In this work, the atomic force microscopy (AFM) analysis indicated that the surface roughness was reduced by the addition of CF4 to the O2 plasma. Contact angle measurements showed that the surface energy decreases with increasing CF4 fraction. At the same time, X-ray photoelectron spectroscopy (XPS) demonstrated the increase in the relative F atomic content on the surface. © 2010 Elsevier B.V. All rights reserved.
키워드
O /CF plasma 2 4, Parylene-C, Surface characteristics
KSP 제안 키워드
Atomic force microscope(AFM), Atomic force microscopy (afm), Contact angle(CA), Contact angle measurements, Etch rates, Gas fraction, Gas mixture, Gas plasma, Inductively-coupled plasma(ICP), Surface characteristics, Surface roughness