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학술지 High-Modulation Efficiency Silicon MachZehnder Optical Modulator based on Carrier Depletion in a PN Diode
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저자
박정우, 유종범, 김인규, 김경옥
발행일
200908
출처
Optics Express, v.17 no.18, pp.15520-15524
ISSN
1094-4087
출판사
Optical Society of America(OSA)
DOI
https://dx.doi.org/10.1364/OE.17.015520
협약과제
09MB1100, 실리콘 기반 초고속 광인터커넥션 IC, 김경옥
초록
We present a high phase-shift efficienct Mach-Zehnder silicon optical modulator based on the carrier-depletion effect in a highly-doped PN diode with a small waveguide cross-sectional area. The fabricated modulator show a V ?I ? of 1.8V쨌cm and phase shifter loss of 4.4dB/mm. A device using a 750 μm-long phase-shifter exhibits an eye opening at 12.5Gbps with an extinction ratio of 3 dB. Also, an extinction ratio of 7 dB is achieved at 4 Gbps for a device with a 2 mm-long phase shifter. Further enhancement of the extinction ratio at higher operating speed can be achieved using a travelling-wave electrode design and the optimal doping. © 2009 Optical Society of America.
KSP 제안 키워드
2 mm, Carrier depletion, Cross-sectional area(CSA), Depletion effect, Mach-Zehnder(MZ), Operating speed, PN diode, Phase Shifter, Silicon optical modulator, Travelling wave, electrode design