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Conference Paper
Improvement of TFT Properties by Hydrogen Defect Passivation for High Performance Flexible Electronics Device Application
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- Authors
- Musarrat Hasan, Houk Jang, Sang Hee Ko Park, Joon Myong Lee, Min Seok Jo, Jae Bon Koo, Kyong Ae Lee, Hyun Sang Hwang, Jong Hyun Ahn, Yong Hae Kim, Seung Youl Kang
- Issue Date
- 2009-09
- Citation
- Trends in Nanotechnology Conference (TNT) 2009, pp.1-2
- Language
- English
- Type
- Conference Paper
- Abstract
- Electronic devices on flexible organic substrate have a huge market in the near future in the form of flexible display, RF ID tags, solar cells and various bio-systems. [1] But due to the limitation imposed by sustainable temperature it is a challenge to grow quality dielectric for transistor application for high mobility device. The dielectrics grown at low temperature (<200 o C) contains lots of defect sites. To improve the device properties, successful defect passivation is absolute necessity. Hydrogen (H 2 ) has been known for years to passivate the defect sites far more effectively, especially near the interface region. [2,3] In this work we have investigated impact of H 2 annealing on the device performance of single-crystal Silicon active layer device on flexible substrate.
- KSP Keywords
- Active Layer, Defect passivation, Device properties, H 2, High performance, Interface region, Organic substrate, Single-crystal silicon, Solar Cells, bio-systems, defect sites