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학술지 Inhomogeneous Electronic State near the Insulator-to-Metal Transition in the Correlated Oxide VO2
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저자
A. Frenzel, M.M. Qazilbash, M. Brehm, 채병규, 김봉준, 김현탁, A.V. Balatsky, F. Keilmann, D.N. Basov
발행일
200909
출처
Physical Review B : Condensed Matter and Materials Physics, v.80 no.11, pp.115115-1-115115-7
ISSN
1098-0121
출판사
American Physical Society(APS)
DOI
https://dx.doi.org/10.1103/PhysRevB.80.115115
협약과제
09MB2300, 전기적 점프(Current Jump)를 이용한 신소자 기술, 김현탁
초록
We investigate the percolative insulator-to-metal transition (IMT) in films of the correlated material vanadium dioxide (VO2). Scattering-type scanning near-field infrared microscopy and atomic force microscopy were used to explore the relationship between the nucleation of metallic regions and the topography in insulating VO2. We demonstrate that the IMT begins within 10 nm from grain boundaries and crevices by using mean curvature and statistical analysis. We also observe coexistence of insulating and metallic domains in a single crystalline grain that points to intrinsic inhomogeneity in VO2 due to competing electronic phases in the IMT regime. © 2009 The American Physical Society.
KSP 제안 키워드
Atomic force microscope(AFM), Correlated material, Crystalline grain, Electronic state, Infrared microscopy, Mean curvature, Single-crystalline, Statistical Analysis, force microscopy, grain boundaries, insulator-to-metal transition