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학술지 PA and LNA for Millimeter-Wave WPAN Using 90 nm CMOS Process
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저자
강민수, 김봉수, 변우진, 김광선, 오승엽, Stephane Pinel, Joy Laskar, 송명선
발행일
200909
출처
Microwave and Optical Technology Letters, v.51 no.9, pp.2029-2032
ISSN
0895-2477
출판사
John Wiley & Sons
DOI
https://dx.doi.org/10.1002/mop.24549
협약과제
09MR4300, 스펙트럼 공학 및 밀리미터파대 전파자원 이용기술개발, 김창주
초록
We present the design and fabrication of power amplifier (PA) and low noise amplifier (LNA) in 60 GHz using 90 nm CMOS process. Both of them have three stages topology. We obtained small signal gain of 21 dB, P 1dB of 4 dBm, and input/output return losses of <-9 dB in PA. We also obtained small signal gain of 25 dB, noise figure of <7 dB, P 1dB of 1.5 dBm, input/out return losses of <-8 dB in LNA. The die sizes of PA and LNA are 1.1 × 0.8 mm 2 and 0.59 × 0.78 mm 2, respectively. Both sizes contain the RF pads and bias pads. Especially, the size of LNA is reduced by using hairpin type matching structure. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2029-2032, 2009 Published online in Wiley InterScience (www.interscience.wiley.com).
키워드
CMOS, Low noise amplifier, Millimeter wave, Power amplifier, Wpan