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A Surface-Micromachined MEMS Acoustic Sensor with X-Shape Bottom Electrode Anchor
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- Authors
- Jae Woo Lee, S.C. Ko, C.H. Je, M.L. Lee, C.-A. Choi, Y.S. Yang, S. Heo, Jong Dae Kim
- Issue Date
- 2009-10
- Citation
- SENSORS 2009, pp.1313-1316
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- A surface-micromachined capacitive-type microelectro-mechanical system (MEMS) acoustic sensor with X-shape bottom electrode anchor on a Si substrate is presented. As it is designed to be implemented on only one side of a substrate for a simple monolithic integrated process, this sensor has X-shape bottom electrode anchor fabricated. The anchor operates to remove the back side process of wafer for a conventional back chamber because the chamber is formed through Si surface etching by an isotropic dry etcher of XeF2. The Si MEMS acoustic sensor proposed in this paper has a diameter of 300 μm and a back chamber depth of 25 μm. It shows a pull down voltage of 9.1 V at 1 kHz and a zero-bias capacitance of 1.87 pF. Additionally, the sensor has an opencircuit sensitivity of 0.57 mV/Pa at 1 kHz on a bias of 5 V. ©2009 IEEE.
- KSP Keywords
- Acoustic Sensor, Bottom electrode, Capacitive-type, Integrated process, Micro-electro-mechanical system(MEMS), Monolithic integrated, Si MEMS, Si substrate, Si surface etching, zero-bias